Semiconductor Device Physics Publications
- Yi Lin, Lan Wang, Michael S. Obrecht and Taj Manku "Quasi-3D Device Simulation for MicroWave Noise Characterization of MOS Devices", IEDM 1998 Technical Digest, pp. 77-80.
- M.S.Obrecht and E.L Heasell "A numerical analysis of transient charge partitioning", IEEE Trans. Electron Devices, vol.43, pp. 424-430, March 1996.
- M.S.Elrabaa, M.S.Obrecht, M.I.Elmasry, "A novel low-voltage low-power full-swing BiCMOS circuits", IEEE Journal of Solid State circuits, vol. 29, N 2, 1994 [4].
- M.S.Obrecht, E.L Heasell, J. Vlach and M.I.Elmasry "Transient Phenomena in High Speed Bipolar Devices", VLSI Design, vol. 8, Nos. 1-4, pp. 475-480.
- G.V.Gadiyak, M.S.Obrecht, S.P.Sinitsa, "Numerical simulation of bipolar injection and recombination in MNOS structure", COMPEL, v.5, N 4, p.227-234, 1986.
- G.V.Gadiyak, M.S.Obrecht, S.P.Sinitsa, "Numerical simulation of MNOS structures", Soviet microelectronics, v.11, N 3, p.26-31, 1985.
- G.V.Gadiyak, M.S.Obrecht, N.L.Shwarts, S.P.Sinitsa, "Modeling of MOSFETs by finite difference methods", Proceedings of NASECODE-IV conference, Boole Press, Dublin, 1985.
- O.V.Bobrikova, M.S.Obrecht, V.F.Stas', "Charge states of primary radiation defects and the defect formation processes in the space charge region of the silicon diode structures", Soviet Physics: Semiconductors, v.25, N 5, pp.501-507 (Fizika i Tekhnika Poluprovodnikov (Leningrad) v.25, N 5, pp.828-838,1991).
- M.S.Obrecht, E.L Heasell and M.I.Elmasry "Transient MOSFET Capacitance Model Revisited", International Conference on Microelectronics, Kuala Lumpur, Malaysia, December 1995.
- M.S.Obrecht, E.L Heasell and M.I.Elmasry "Transient Analysis of a CML BJT under High and Low Level Injection", International Seminar on Simulation of Devices and Technologies, Pretoria, South Africa, November 1995.
- M.S.Obrecht, E.L Heasell, J. Vlach and M.I.Elmasry "Transient Phenomena in High Speed Bipolar Devices", International Workshop on Computational Electronics, University of Notre Dame, IN, May 1997.